Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates
E. Richter1, S. Fleischmann1, D. Goran3, S. Hagedorn1, W. John1, A. Mogilatenko1,2, D. Prasai1, U. Zeimer1, M. Weyers1, and G. Tränkle1
Published in:
J. Electron. Mater., vol. 43, no. 4, pp. 814-818 (2014).
Abstract:
Growth of AlxGa1-xN layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their orientation and size promote the formation of coalesced c-plane-oriented AlxGa1-xN layers with reduced crack density. The orientation of parasitic crystallites in the honeycomb openings is investigated using scanning electron microscopy and electron back-scatter diffraction. Crystallites with their [11.0] and [52.3] directions parallel to the vertical growth direction of the Al0.3Ga0.7N layer are observed and successfully overgrown by a 20-µm-thick fully coalesced c-plane-oriented layer.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Institut fuer Physik, Humboldt Universitaet zu Berlin, Newtonstr. 15, 12489 Berlin, Germany
3 Bruker Nano GmbH, Am Studio 2D, 12489 Berlin, Germany
Keywords:
AlGaN, PSS, HVPE, pseudosubstrates
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