Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers
T. Shivan1, M. Hossain1, R. Doerner1, S. Schulz1, T. Johansen2, S. Boppel1, W. Heinrich1 and V. Krozer1,3
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., Boston, USA, Jun. 2-7, pp. 1011-1014 (2019).
Abstract:
This work reports a high-isolation SPDT switch realized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 ... 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.
1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Technical University of Denmark (DTU), Kgs. Lyngby, Denmark
3 Johann Wolfgang Goethe-Universität, Frankfurt am Main, Germany
Index Terms:
Single-Pole-Double-Throw, InP double hetero-junction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), high isolation SPDT switch.
Copyright © 2019 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.