High brightness photonic band crystal semiconductor lasers in the passive mode locking regime
R. Rosales1, V.P. Kalosha1, K. Posilovic1,2, M.J. Miah1, D. Bimberg1, J. Pohl3, and M. Weyers3
Published in:
Appl. Phys. Lett., vol. 105, no. 16, 161101 (2014).
Abstract:
High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm-2 sr-1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.
1 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
2 PBC Lasers GmbH, Hardenbergstrasse 36, 10623 Berlin, Germany 3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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