E. Richter, E. Gridneva, M. Weyers, G. Tränkle

Published in:

J. Cryst. Growth, vol. 456, pp. 97-100 (2016).

Abstract:

Fe-doping of GaN layers of 3 in. in diameter and a thickness of 1 mm in a vertical AIX-HVPE reactor is studied. Ferrocen was used as Fe source. It is shown that a sufficient uniformity of growth conditions, a high purity of undoped GaN layers, and a moderate Fe incorporation of 2×10¹⁸cm^-3 allow for growth of semi-insulating GaN layers with a sufficiently high specific resistivity even at elevated temperature. This makes the material suitable as substrate for electronic power devices at high power or in harsh ambient.

Keywords:

A1. Doping; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting III.

Copyright © 2016 Elsevier B.V. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier B.V.

Full version in pdf-format.