European GaN Device Technologies for Microwave and Power Switching Applications
Published in:
Proc. of Asia-Pacific Microwave Conference (APMC 2014), Sendai, Japan, Nov. 4-7, pp. 917-919 (2014).
Abstract:
An overview on European GaN technologies towards high power microwave and high voltage power switching applications is presented. It contains a survey on the most important technological approaches, device performance data and reliability achievments. A special emphasis is devoted to the GaN technologies at Ferdinand-Braun-Institut (FBH), Berlin.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Index Terms:
Gallium nitride, gallium nitride technology, gallium nitride epitaxy, microwave devices, power electronic devices.
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