Engineering AlGaAs-on-insulator toward quantum optical applications
M. Placke1,2 and S. Ramelow1
Published in:
Opt. Lett., vol. 45, no. 24, pp. 6763-6766 (2020).
Abstract:
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large bandgap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second- and third-order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon-photon nonlinearities accessible.
1 Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin, Germany
2 Ferdinand-Braun Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Topics:
Nonlinear optics, Nonlinear parametric processes, Phase matching, Phase shift, Phase velocity, Thulium doped fiber lasers
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