EM Simulation Assisted Parameter Extraction for the Modeling of Transferred-Substrate InP HBTs
T.K. Johansen1, N. Weimann2, R. Doerner2, M. Hossain2, V. Krozer2, and W. Heinrich2
Published in:
Proc. 12th European Microwave Integrated Circuits Conf. (EuMIC 2017), Nuremberg, Germany, Oct. 9-10, pp. 240-243 (2017).
Abstract:
In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.
1 Technical University of Denmark, Department of Electrical Engineering, DK-2800 Kgs. Lyngby, Denmark
2 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
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