Efficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes
M. Kantner1, U. Bandelow1, T. Koprucki1, J.-H. Schulze2, A. Strittmatter2, and H.-J. Wünsche1,3,4
Published in:
IEEE Trans. Electron Devices, vol. 63, no. 5, pp. 2036-2042 (2016).
Abstract:
Current injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and theoretical evidence is found for a rapid lateral spreading of the carriers after passing the oxide aperture in the conventional p-i-n-design. By an alternative design employing p-doping up to the oxide aperture, the current spreading can be suppressed resulting in an enhanced current confinement and increased injection efficiencies, both, in the continuous wave and under pulsed excitation.
1 Weierstrass Institute for Applied Analysis and Stochastics, 10117 Berlin, Germany
2 Institute of Solid State Physics, Technical University of Berlin, 10623 Berlin, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
4 Department of Physics, Humboldt University of Berlin, 12489 Berlin, Germany
Index Terms:
Quantum dots (QDs), semiconductor device simulation, single-photon sources (SPSs).
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