Efficient coupling of the inhomogeneous current spreading model to the dynamic electro-optical solver for broad-area edge-emitting semiconductor devices
M. Radziunas1, A. Zeghuzi2, J. Fuhrmann1, T. Koprucki1, H.-J. Wünsche1,2, H. Wenzel2, U. Bandelow1
Published in:
Opt. Quant. Electron., vol. 49, no. 10, pp. 332 (2017).
Abstract:
We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edge-emitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.
1 Weierstrass Institute, Mohrenstr. 39, 10117 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
Broad area lasers, Modeling, Traveling wave, Inhomogeneous current spreading, Laplace problem, Separation of variables, Finite volumes, Effective implementation.
Copyright © Springer Science+Business Media, LLC 2017. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from Springer Science+Business Media.
Link to Publisher version (Springer)
Link to Author version