Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering Applications
A. Possberg1, M. Hossain2, N. Weimann1
Published in:
Third International Workshop on Mobile Terahertz Systems (IWMTS), Essen, Germany, Jul. 1-2, virtual event, ISBN: 978-1-7281-5598-2 (2020).
Abstract:
A design for a 300 GHz reflection type push-push oscillator including an input for an external injection locking signal is proposed. The oscillator is based on substrate transferred InP double heterojunction bipolar transistors. The intrinsic performance of the circuit is evaluated in Harmonic-Balance (HB) simulations. Furthermore, the circuit behavior under the influence of an injected signal is investigated in transient simulations and the key parameters for the locking range are derived. Additionally, a comparison of one-sided and differential injection of the locking signal is made and it is shown that the one-sided injection of the locking signal is a viable approach for the here proposed oscillator.
1 Dept. Components for High Frequency Electronics (BHE), University of Duisburg-Essen, Duisburg, Germany
2 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Keywords:
injection-locked oscillators, double heterojunction bipolar transistors, InP
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