Characterization of diode-laser stacks for High-Energy-Class Solid-State Lasers
J. Pilara, P. Sikocinskia, A. Pranowicza, M. Divokya, P. Crumpb , R. Staskeb, A. Lucianettia, and T. Moceka
Published in:
Proc. SPIE, vol. 8965, Photonics West, San Francisco, USA, Feb. 1-6, 896516 (2014).
Abstract:
In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1%, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.
a HiLASE project, Institute of Physics, AS CR, Na Slovance 2, Prague, Czech Republic
b Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
diode stacks, high power, semiconductor.
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