Balanced G-Band Gm-Boosted Frequency Doublers in Transferred Substrate InP HBT Technology
T.K. Johansen1, T. Al-Sawaf2, N. Weimann2, W. Heinrich2, and V. Krozer2
Published in:
Proc. 11th European Microwave Integrated Circuits Conf. (EuMIC 2016), London, UK, Oct. 3-4, pp. 89-92 (2016).
Abstract:
In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output. The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 dBm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75-110 GHz.
1 Technical University of Denmark, Department of Electrical Engineering, DK-2800 Kgs. Lyngby, Denmark
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Index Terms:
Frequency doublers, G-band, heterojunction bipolar transistor (HBT), millimeter-wave monolithic integrated circuits, InP, transferred substrate.
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