AlGaN multi-quantum barriers for electron blocking in group III-nitride devices
A. Muhin1, M. Guttmann1, T. Wernicke1, M. Kneissl1,2
Published in:
18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018), Hong Kong, China, Nov. 5-9, pp. 21-22 (2018).
Abstract:
In this paper we investigate the enhancement of electron blocking in AlGaN multi-quantum barriers (MQBs). Simulations of effective barrier height of Al0.2Ga0.8N/GaN-MQBs were performed in order to find optimal layer design. By using a strict optimization procedure the optimized MQB exhibits an increase of the effective barrier height of over 120 meV compared to a bulk electron blocking layer (EBL). This value was achieved for nearly all combinations of material parameters found in literature and for up to ±10% layer thickness fluctuations. Based on the optimized design a sample series for experimental determination of effective barrier heights in AlGaN-MQBs is proposed.
1 Institute of Solid State Physics, Technische Universität Berlin, Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Keywords:
Multi-quantum barriers, MQB, electron blocking, nitrides, light emitting diodes
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