Quelle: Semiconductor Today, 29.11.2019 (in Englisch)

FBH-led project ‘power transistors based on AlN (ForMikro-LeitBAN)’ launched

Coordinated by the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) of Berlin, Germany, the recently launched joint project ‘power transistors based on AlN (ForMikro-LeitBAN)’ aims to develop highly efficient power semiconductors that can pave the way for a wide range of novel applications – from e-mobility to artificial intelligence.