Quelle: Compound Semiconductor, March 2015, S. 30 ff. (in Englisch)

Building brighter, more powerful lasers diodes

(...) Reducing the number of lateral modes has also held the key to the high performance of lasers fabricated by scientists from the Ferdinand Braun Institute in Berlin. By combining advanced epitaxial designs with facet passivation and 30 µm-wide stripes that cut off higher order lateral modes, the team could produce diodes delivering more than 7 W at an efficiency in excess of 50 percent, while realising a beam parameter product of around 1.5 mm-mrad. (...)
mehr... (pdf, in Englisch, FBH ab S. 33)