Quelle: Science Daily, 27.08.2019 (in Englisch)

Energy-efficient power electronics: Gallium oxide power transistors with record values

Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity.
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