Widely Tunable High-Power Tapered Diode Laser at 1060 nm
O.B. Jensen1, B. Sumpf2, G. Erbert2, and P.M. Petersen1
Published in:
IEEE Photonics Technol. Lett., vol. 23, no. 21, pp. 1624-1626 (2011).
Abstract:
We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range.
1 DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde, Denmark
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Index Terms:
Laser tuning, quantum-well lasers, semiconductor lasers, tapered lasers.
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