A. Liero, A. Klehr, A. Knigge and W. Heinrich
Eng. Res. Express, vol. 2, no. 1, pp. 015023, doi:10.1088/2631-8695/ab5be5 (2020).
This paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable of switching currents of 0.8 A with 200 ps minimum pulse width and 50 A with 3 ns minimum pulse width. The pulses can be externally triggered by ECL logic. Both single-pulse and pulse train modes are possible.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
picosecond laser source, GaN HEMT, fast current driver, optical pulse gating, mode locking.
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