Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
R. Steinsa, N. Kaluzaa, H. Hardtdegena, M. Zornb , K. Haberlandc and J.-T. Zettlerc
Published in:
J. Crystal Growth 272 (2004) 81-86.
Abstract:
In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The complete procedure for temperature calibration and real-time wafer temperature measurement on transparent substrates will be presented.
a Centre of Nanoelectronic Systems for Information Technology, Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
c LayTec Gesellschaft für in situ und Nansosensorik mbH, Helmholzstr. 13-14, D-10587 Berlin, Germany
Keywords:
A1. Characterization; A1. Emissivity corrected pyrometry; A1. In-situ monitoring; A1. Wafer temperature; A3. Metalorganic vaporphase epitaxy; B1 Nitrides
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