M. Rudolph

Published in:

IEEE Trans. Microwave Theory Tech., vol. 52, no. 5, pp. 1399-1403, May 2004.

Abstract:

This paper identifies possible numerical instabilities in compact HBT models, which are introduced by a physical meaningful self-heating description. Removing these possible sources of nonconvergence would deteriorate model accuracy since they originate from the device physics. It is, therefore, necessary to be aware of them during parameter extraction and circuit simulation.

Index Terms:
Equivalent circuit, HBT, semiconductor device modeling.

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