Thermal lens engineering for high brightness edge emitters
M.J. Miah1,2, D. Martin2, A. Ginolas2, M. Elattar2, P. Della Casa2, S. Grützner3, S. Strohmaier3, A. Knigge2, G. Tränkle2, P. Crump2
Published in:
IEEE Photonics Conference (IPC 2023), Orlando, USA, Nov. 12-16, ISBN 979-8-3503-4722-7 (2023).
Abstract:
We review approaches for the manipulation (flattening) of thermal profiles within broad-area-lasers for improved efficiency and brightness, illustrated with 1-cm wide, kW-class, 9xx-nm bars. Exemplary device structures yield 2° (∼18%) reduced beam divergence (95% power) and 5%-point efficiency gain at 0.8kW compared to reference bars.
1 Institute of Information and Communication Technology, Bangladesh University of Engineering and Technology, ECE Building, 1205, Dhaka, Bangladesh
2 Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
3 TRUMPF Laser GmbH, 78713 Schramberg, Germany
Keywords:
Semiconductor laser, laser bar, kW-class laser bar, high-power laser, narrow beam divergence, beam quality
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