The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M. Kneissl1,2, T.-Y. Seong3, J. Han4 and H. Amano5
Published in:
Nat. Photonics, vol. 13, no. 4, pp. 233-244 (2019).
Abstract:
By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210-400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industrial or medical. However, technical developments notwithstanding, deep-ultraviolet light-emitting diodes still exhibit relatively low external quantum efficiencies because of properties intrinsic to aluminium-rich group III nitride materials. Here, we review recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices. We also describe the key obstacles to enhancing their efficiency and how to improve their performance in terms of defect density, carrier-injection efficiency, light extraction efficiency and heat dissipation.
1 Institute of Solid State Physics, Technische Universität Berlin, Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
3 Department of Materials Science and Engineering, Korea University, Seoul, South Korea
4 Department of Electrical Engineering, Yale University, New Haven, CT, USA
5 Center of Integrated Research of Future Electronics, and Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
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