Tailoring of high-temperature photoluminescence in InAs/GaAs bilayer quantum dot structures
Yu.I. Mazura, Zh.M. Wanga, G.G. Tarasova, Vas.P. Kunetsa, G.J. Salamoa, Z.Ya. Zhuchenkob, H. Kissela
Published in:
J. Appl. Phys., vol. 98, no. 5, pp. 053515 (2005).
Abstract:
Temperature-dependent photoluminescence is investigated in bilayer InAs/GaAs quantum dot structures with constant InAs deposition θ1 in the seed layer, but variable deposition θ2 in both the second layer and the GaAs spacer layer. It is shown that interlayer coupling, leading to the formation of asymmetric quantum dot pairs, strengthens the high-temperature photoluminescence and strongly influences carrier relaxation channels. We report that radiative recombination and carrier capture efficiency by the quantum dots in the second layer can be tailored using the deposition θ2 and the GaAs spacer thickness.
a Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
b Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 41, 03028 Kiev, Ukraine
c Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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