Switching behavior and dynamic on-resistance of lateral β-Ga2O3 MOSFETs up to 400 V
C. Kuringa, K. Tetznerb, A. Poppc, S. Heuckea, O. Hiltb, S.B. Anoozc, J. Würflb, S. Dieckerhoffa
Published in:
IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, Nov. 7-11, ISBN 978-1-6654-0182-1, pp. 52-57 (2021).
Abstract:
This paper studies switching behavior and dynamic on-state characteristics of lateral 10 mm depletion-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). Improvements in device technology and fabrication enable hard-switching operation with an increase of the maximum blocking voltage to 400 V at 0.26 A load current in a double-pulse test configuration. Compared to static measurements, dispersion effects lead to an increased on-resistance in hard-switched operation, which becomes especially pronounced at blocking voltages above 200 V. The extend of dynamic Ron-increase further depends on several operation conditions such as switching speed, on-state duration and load current.
a Technische Universität Berlin, Chair of Power Electronics, Berlin, Germany
b Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
c Leibniz-Institut für Kristallzüchtung, Berlin, Germany
Keywords:
gallium oxide, power MOSFET, switching characteristics, double-pulse, dynamic on-resistance
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