Spectroscopy of high-density assemblage of InAs/GaAs quantum dots
Z.Ya. Zhuchenko1, J.W. Tomm2, H. Kissel3 , Yu.I. Mazur4, G.G. Tarasov1, W.T. Masselink1
Published in:
Inst. Phys. Conf. Ser. No 174, 165-168 (2003).
Abstract:
High-density arrays of InAs/GaAs quantum dots (QDs) have been studied by means of steady-state and time resolved photoluminescence (PL) within a wide range of laser power. The ground state tunnelling between neighbouring QDs is suggested to be an important relaxation channel defining the PL spectral shape both at very low excitation density and at the temperature elevation. This channel becomes blocked when the QDs ground states population reaches the saturation at high excitation density.
1Department of Physics, Humboldt-Universität zu Berlin, 10115 Berlin, Germany
2Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany
3Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
4Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Inst. Phys. Conf. Ser. No 174, 165-168 (2003).
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