Publikationen

Quasi-3-D Simulation of High-Brightness Tapered Lasers

L. Borruel1, S. Sujecki2, P. Moreno1, J. Wykes2, M. Krakowski3, B. Sumpf4 , P. Sewell2, S. Auzanneau3, H. Wenzel4, D. Rodríguez1, T. Benson2, E. Larkins2, I. Esquivias1

Published in:

IEEE J. Quantum Electron. vol. 40, S. 463-472, May 2004.

Abstract:

We present a simulation tool useful to optimize the design of semiconductor tapered lasers and to study the physical processes inside of them. This is achieved by using a state-of-the-art quasi-three-dimensional (quasi-3-D) electrical and thermal model, coupled to a two-dimensional (2-D) wide-angle beam propagation method optical model. A calibration procedure of model parameters is proposed to contribute to the development of reliable simulation tools. Different laser diodes with a tapered gain section, emitting at 735 and 975 nm, are used to validate the model through the extensive comparison of experimental and simulated results. The suitability of 2-D and 3-D electrical, thermal, and optical models is discussed in terms accuracy and computational effort.

1 Departamento de Tecnología Fotónica, Universidad Politécnica de Madrid, Madrid 28040, Spain
2 School of Electrical and Electronic Engineering, University of Nottingham, Nottingham NG7 2RD, U.K.
3 Thales Research and Technology France, Domain de Corbeville 91404 Orsay, France
4 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Index Terms:
Beam quality, filamentation, high-brightness lasers, laser modeling, tapered lasers.

© 2004 The IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Full version in pdf-format.