K. Paschke , A. Bogatov, F. Bugge, A.E. Drakin, J. Fricke, R. Güther, A.A. Stratonnikov, H. Wenzel, G. Erbert, G. Tränkle

Published in:

IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, 1172-1178 (2003).

Abstract:

An improvement of the linearity of the light-current characteristics and the beam quality of high-power Alpha-distributed feedback lasers is achieved by an ion implantation of the regions outside the contact stripe. The linear part of the light-current characteristics of 4-mm-long devices emitting at 1060 nm is extended to P = 1.8 W output power. The times-diffraction-limit factor M² remains constant, equal to 1.7 over the whole power range. Simulations of the electro-optical behavior reveal that the improvement is achieved by a suppression of optical field components which propagate inside the cavity perpendicular to the facts.

Index Terms:
Angled grating, distributed feedback (DFB) laser, high-power semiconductor laser, implantation, simulation, slanted Bragg grating.

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