Progress in Efficiency and Brightness in GaAs-Based High Power Diode Lasers
P. Crump and G. Tränkle
Published in:
Photonics Device Workshop 2019, Tokyo, Japan, Dec. 5-6 (2019).
Abstract:
Continuous improvement is required in the properties of GaAs-based high power diode lasers, to support the needs of the rapidly growing material processing market, amongst others. A brief overview is presented on recent work at the Ferdinand Braun Institute in Berlin, to understand and address material and physical limits to performance, to enhance the properties of diode lasers in standard commercial configurations and to help enable emerging applications.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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