Pressure and temperature tuning of an external cavity InGaAsP laser diode
F. Dybala1, A. Bercha1,2, B. Piechal1, W. Trzeciakowski1, R. Bohdan1, M. Mrozowicz1, A. Klehr3, P. Ressel3, H. Wenzel3, B. Sumpf3 and G. Erbert3
Published in:
Semicond. Sci. Technol., vol. 23, no. 125012 (2008).
Abstract:
We demonstrate wide-range tuning of an 830 nm InGaAsP laser diode by pressure and temperature combined with tuning by external grating. Pressure tuning (up to 11 kbar) yields the wavelength range of 70 nm limited by the increase of the threshold current. Temperature tuning from room temperature down to 90 K yields the wavelength range of 56 nm. The reliability of the lasers subjected to pressure or temperature cycles seems to be mainly related to mounting-induced strains, i.e. the choice of proper submount is crucial. The tuning range achieved with external grating decreases at high pressure (and at low temperature).
1 Instytut Wysokich Cisnien PAN, Sokolowska 29/37, 01-142 Warsaw, Poland
2 Uzhgorod National University, Pidhirna 46, 88000 Uzhgorod, Ukraine
3 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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