Polarization dependent study of gain anisotropy in semipolar InGaN lasers
J. Rass1, T. Wernicke1, S. Ploch1, M. Brendel2,3, A. Kruse2, A. Hangleiter2, W. Scheibenzuber4, U.T. Schwarz4, M. Weyers3, and M. Kneissl1,3
Published in:
Appl. Phys. Lett., vol. 99, no. 171105 (2011).
Abstract:
The optical gain of single quantum well laser structures on semipolar (1122)-GaN in dependence of the optical polarization and the resonator orientation has been studied by variable stripe length method. The c,-[1123] resonator shows maximum gain in TE mode, followed by the m-[1100]-resonator with extraordinary polarization. The anisotropic gain behaviour is explained by valence sub-band ordering and birefringence of the wurtzite crystal, resulting in a modification of the transition matrix element for stimulated emission. Measurements are accompanied by 6x6 k · p band structure calculations and gain analysis.
1 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin, Germany
2 Institut für Angewandte Physik, Technische Universität Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
4 Fraunhofer Institute for Applied Solid State Physics, IAF, Tullastrasse 72, 79108 Freiburg, Germany
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