Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots
Zh.M. Wang1, Yu.I. Mazur1, Sh. Seydmohamadi1, G.J. Salamo1, H. Kissel2
Published in:
Appl. Phys. Lett., vol. 87, no. 21, pp. 213105 (2005).
Abstract:
Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the photoluminescence from quantum dots layer-by-layer. High optical quality is demonstrated for laterally ordered quantum dot arrays. GaAs(511)B is identified as the optimum high index substrate for growth of InGaAs/GaAs multilayered quantum dots, demonstrating strong photoluminescence with a narrow full width at half maximum linewidth of 23 meV in spite of the potential for misfit dislocations.
1 Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
2 Ferdinand-Braun-Institut fuü Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
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