Md. J. Miah, A. Boni, S. Arslan, D. Martin, P. Della Casa, and P. Crump
IEEE Photonics J., vol. 14, no. 3, art. 1525505, doi:10.1109/JPHOT.2022.3165399 (2022).
GaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power Popt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS) epitaxial layer structure diminishes power saturation of high-power bars at high driving current. The resulting ETAS bars with 4 mm cavity produce a record 1.9 kW peak power, limited by available current supply, with a maximum power conversion efficiency ηE = 67% at THS = 25 °C heat-sink temperature. Both Popt and ηE have been increased further by operating the bars at THS = -70 °C. Sub-zero operation raises the Popt to 2.3 kW and the maximum ηE to 74%. A second configuration of ETAS bars with optimized lateral layout is further realized to obtain narrow lateral beam divergence Θ up to 2 kA driving current, without sacrificing Popt and ηE. A 2-3° lower Θ (95% power level) is observed over a wide operating range at room temperature. A high degree of polarization is also maintained across the whole operating range.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Beam quality, beam parameter product, diode lasers, high efficiency, high-power lasers, laser bars, near field, far field, semiconductor lasers.
This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/.
Full version in pdf-format.