M. Guttmann¹, F. Mehnke¹, B. Belde¹, F. Wolf¹, C. Reich¹, L. Sulmoni¹, T. Wernicke¹, and M. Kneissl^1,2

Published in:

Jpn. J. Appl. Phys., vol. 58, no. SC, pp. SCCB20, doi:10.7567/1347-4065/ab0d09 (2019).

Abstract:

The influence of aluminum mole fraction of Al_xGa_1-xN/Al_yGa_1-yN multiple quantum wells (MQWs) on the optical polarization, light extraction efficiency (LEE) and external quantum efficiency (EQE) of deep ultra violet light emitting diodes in the wavelength range between 264 and 220 nm is investigated. The on-wafer EQE decreases from 0.6% to 0.00013% in this wavelength range. Polarization resolved photoluminescence and electroluminescence measurements show a change from dominant transverse-electric to dominant transverse-magnetic polarized light emission with increasing aluminum mole fraction in the MQW. The quantitative agreement with k·p calculations allow to ascribe this shift to a change of the characteristic of the Γ₇₊ valance band. Ray tracing simulations predict a reduction of the on-wafer LEE from 4% to 1.5%. Therefore the dramatic drop of the EQE in this wavelength range cannot be attributed to a drop in LEE and is most likely dominated by charge carrier injection and radiative recombination efficiency.

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