M. Zorn¹ , J.-T. Zettler², U. Zeimer¹, M. Weyers¹

Published in:

Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, Lausanne, Switzerland, C03, pp. 163-165 (2005).

Abstract:

AlGaInP lattice matched to GaAs is the key material in opto-electronic devices like light emitting diodes (LED), edge-emitting lasers (EEL) and vertical-cavity surface-emitting lasers (VCSEL) emitting in the visible wavelength range. Changing the Al content in (Al_xGa_1-x)_0.52In_0.48P from 0 to 1 shifts the emission wavelength in the range of about 650 nm to 500 nm. Furthermore (Al_xGa_1-x)_0.52In_0.48P with high x values is the only possible barrier material in red EELs and VCSELs. A tight control of the Al composition (band gap) and In composition (lattice matching) is highly desired during MOVPE growth. Recently, it has been shown that it is possible to control the composition in InGaAsP growth on InP in MOVPE [1]. However, the situation in this material system is much more simple since this material consists of two group III and two group V components. For (Al_xGa_1-x)_0.52In_0.48P the situation is more challenging because of the three group III components used. Watatani et al. demonstrated the possibility of correlating the in-situ measured reflectance at 2.3 eV to the Al/Ga ratio in their AlGaInP layers [2]. However, the In content for lattice matched growth has not been measured in-situ yet.

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