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Novel monolithically integrated bidirectional GaN HEMT

C. Kuring1, O. Hilt2, J. Böcker1, M. Wolf2, S. Dieckerhoff1, J. Würfl2

Published in:

IEEE Energy Conversion Congress and Exposition (ECCE), Portland, USA, Sep. 23-27, pp. 876-883 (2018).

Abstract:

Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows for substantially reduced conduction losses in applications such as the multilevel T-type inverter which benefit from power semiconductors with bidirectional voltage blocking capability. In static and dynamic characterizations, the monolithically integrated bidirectional GaN HEMT exhibits similar switching and on-state behavior like conventional unidirectional GaN HEMTs.

1 Chair of Power Electronics Technische Universität Berlin, Einsteinufer 19, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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