Normally-off GaN Transistors and Diodes for Power Applications
O. Hilt, E. Bahat-Treidel and J. Würfl
Published in:
3rd Global COE Int. Symp. Electronic Devices Innovation (EDIS 2011), Osaka, Japan, Dec. 16-17 (2011).
Abstract:
Different normally-off concepts for high voltage GaN power switching transistors are compared and benchmarked. For full GaN-based power electronics, a lateral GaN Schottky-barrier diode with low onset voltage and low capacitive charge is discussed.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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