Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
B. Kunert1, A. Klehr2 , S. Reinhard1, K. Volz1, W. Stolz1
Published in:
Electron. Lett., vol. 42, no. 10, pp. 601-603 (2006).
Abstract:
Electrical injection lasing has been verified for GaP-based broad-area Ga(NAsP)/GaP single-quantum-well heterostructures near room temperature for the first time. The lasers have been grown by metal organic vapour phase epitaxy. Owing to the comparable lattice constants of this novel material system to that of Si, this novel dilute nitride III/V laser material might be applied for optoelectronic devices integrated to Si microelectronics in the future.
1 Philipps-University, Material Sciences Center and Faculty of Physics, Marburg, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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