MOVPE growth of semiconductor disk laser (SCDL) structures
M. Zorn1 , T.K. Tien2, J.W. Tomm2, H. Kissel1, U. Zeimer1, F. Saas2, U. Griebner2, M. Weyers1
Published in:
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, Lausanne, Switzerland, pp. 309-311 (2005).
Abstract:
Semiconductor disk lasers (SCDL), also known as vertical external-cavity surface-emitting lasers (VECSEL) or optically pumped semiconductor lasers (OPSLs) represent a new field in semiconductor device research [1,2]. One of the key advantages of these devices is an excellent beam quality together with a scalable output power up to several watts. The structures are pumped optically and use an external second mirror in contrast to vertical-cavity surface-emitting lasers (VCSEL), where both mirrors are included in the epitaxial structure reducing the possible output power to the order of mW only.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (MBI), Max-Born-Straße 2a, D-12489 Berlin, Germany
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