Micromachined 60 GHz GaAs Power Sensor with Integrated Receiving Antenna
K. Mutamba, K. Beilenhoff1, A. Megej, R. Doerner2, E. Genc, A. Fleckenstein, P. Heymann2, J. Dickmann3, C. Woelk3, H. L. Hartnagel
Published in:
IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 2235-2238 (2001).
Abstract:
A micromachined 60 GHz GaAs power sensor with a monolithically-integrated receiving antenna will be presented. In this sensor configuration thermoelectrical properties of AlGaAs/GaAs heterostructures are used, so that no external dc power supply is needed. First measurements with separate sensor and antenna strutures on the same chip have shown a broadband sensor response as well as an excellent matching between the antenna and the sensor input.
Institut für Hochfrequenztechnik, Technische Universität Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany
1 now with United Monolithic Semiconductors S.A.S., BP 46, 91401 Orsay Cedex, France
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
3 DaimlerChrysler AG Research Center, Wilhelm-Runge-Str. 11, 89081 Ulm, Germany
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