M. Chi1, A. Müller2, A.K. Hansen1, O.B. Jensen1, P.M. Petersen1, and B. Sumpf2
Appl. Opt., vol. 59, no. 2, pp. 295-299 (2020).
A novel compact micro-integrated high-power narrow-linewidth external-cavity diode laser around 808 nm is demonstrated. The laser system contains a tapered amplifier consisting of a ridge-waveguide section and a tapered section with separated electrical contacts. Thus, the injection currents to both sections can be controlled independently. An external volume Bragg grating is utilized for spectral narrowing and stabilization. The diode laser system is integrated on a 5mm×13mm aluminum nitride micro-optical bench on a conduction cooled package mount with a footprint of 25mm×25mm. The diode laser system is characterized by measuring the output power and spectrum with the injection currents to the ridge-waveguide section (IRW) and tapered amplifier section (ITA) changed in steps of 25 and 50 mA, respectively. At IRW=200 mA and ITA=6.0 A, 3.5 W of output power is obtained with an emission spectral linewidth with an upper bound of 6 pm, and a beam propagation factor in the slow axis, M2, of 2.6 (1/e2). The characterization of the temperature stabilization of the laser system shows an increase of the wavelength at a rate of 6.5 pm/K, typical for the applied volume Bragg grating.
1 DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Frederiksborgvej 399, P.O. Box 49, DK-4000 Roskilde, Denmark
2 Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Copyright © 2020 Optical Society of America. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Optical Society of America.
Full version in pdf-format.