Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructures
Vas.P. Kunets1, Z.Ya. Zhuchenko1, H. Kissel2 , U. Müller1, G.G. Tarasov1, W.T. Masselink1
Published in:
Inst. Phys. Conf. Ser. No 174, 81-84 (2003).
Abstract:
Strikingly strong many-body enhancement of the oscillator strength for interband transitions is observed in the photoluminescence (PL) of heavily doped pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures under condition of the n = 2 subband filling. The many-body excitations reveal a remarkable stability with respect to the thermal and excitation density decay. Such behaviour is addressed the intersub-band coupling in high-density one-component plasma of InGaAs quantum well in the presence of defects localising the heavy holes.
1 Department of Physics, Humboldt-Universität zu Berlin, 10115 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Inst. Phys. Conf. Ser. No 174, 81-84 (2003).
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