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Large-Signal Modeling of High-Voltage GaAs Power HBTs

M. Rudolph, R. Doerner

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Long Beach, USA, Jun. 17, ISBN 0-7803-8845-3, pp. 457-460 (2005).

Abstract:

This paper presents modeling results for newly developed InGaP/GaAs power HBTs operating at bias voltages up to Vce = 26 V. The devices are flip-chip mounted for heat-sinking and deliver output powers above 10 W. It is shown that the FBH HBT model is capable of describing those devices despite the fact that it was developed originally for standard 'low-voltage' HBTs. This result is an impor- tant statement with respect to circuit design based on this promising technology.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Keywords:

Heterojunction bipolar transistor, semiconductor device modeling, equivalent circuit.

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