M. Rudolph , R. Doerner

Published in:

IEEE MTT-S Int. Microwave Symp. Dig., 2004, pp. 43-46.

Abstract:

Measurements and simulations are carried out in order to determine the requirements for a HBT model to predict the generation of harmonics. Unlike investigations based on Volterra series, also the case of large excitations is investigated, where the load-line reaches through wide ranges of currents and voltages, and self-biasing effects take place. It turnes out that in class A operation, it is absolutely necessary for the model to account for the current dependence of the base-collector capacitance and collector transit time, even in a set-up where fundamental power and bias points are predict well also without.

Keywords:
Heterojunction bipolar transistor, semiconductor device modeling, equivalent circuit, nonlinear distortion.

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