Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications
H. Wenzel, J. Fricke, A. Maaßdorf, R. Staske, N. Ammouri, H. Christopher, C. Zink, D. Martin, M. Weyers, A. Knigge
Published in:
27th International Semiconductor Laser Conference (ISLC), Potsdam, Germany, Oct. 10-14, ISBN 978-1-6654-4133-9, WP3.5 (2021).
Abstract:
We present a bipolar-cascade distributed-Bragg reflector laser emitting near 905 nm with a high slope efficiency. The wavelength stabilization by a surface grating was achieved by placing three active regions and two tunnel junctions into the nodes and antinodes, respectively, of the third-order vertical waveguide mode.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
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