F. Bugge , U. Zeimer, H. Wenzel, G. Erbert and M. Weyers

Published in:

J. Crystal Growth 272 (2004) 531-537.

Abstract:

With the aim of realizing laser diodes on GaAs with an emission wavelength above 1120nm, we have studied the indium incorporation behavior into highly strained pseudomorphic InGaAs-QWs grown by metalorganic vapor-phase epitaxy (MOVPE). To obtain such long wavelengths the In_xGa_1-xAs (x>0.3) quantum wells were grown at much lower temperature (530°C) than the AlGaAs cladding layers. The indium diffusion and the resulting emission wavelength shift during growth of the upper cladding layers and their dependence on growth parameters like strain compensation, quantum well composition and V/III-ratio has been studied.
Laser diodes with very small far field angles were processed into broad area devices (50-200µm x 1000-4000µm). Such devices show thermally limited output cw powers above 10W.

Keywords:
A3. Metalorganic vapor-phase epitaxy; A3. Quantum wells; B1. InGaAs; B3. Laser diodes

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