InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process
M. Liskera, A. Truscha, A. Krügera, M. Fraschkea, P. Kulsea, Y. Borokhovycha, B. Tillacka,b, I. Ostermayc, T. Krämerc, A. Thiesc, O. Krügerc, F.-J. Schmücklec, V. Krozerc, and W. Heinrichb,c
Published in:
ECS J. Solid State Sci. Technol., vol. 3 no. 2, P17-P20 (2014).
Abstract:
Broadband transmitters for radio links in the millimeter band are key building blocks for future wireless communication systems. Such components can be realized by means of an InP-on-BiCMOS technology. This allows the combination of the high performance of III-V transistors with the advantages of BiCMOS circuits. Critical performance trade-offs can be avoided in comparison to the pure III-V or BiCMOS versions. The passive elements and the interconnections between InP and BiCMOS were fabricated in a first run. The results are shown in the present work. This run showed the feasibility of the wafer bond process for the heterointegration of InP and BiCMOS. An aluminum back-end was built on the silicon wafer with silicon dioxide as interlayer dielectric. A gold metallization in benzocyclobutene (BCB) as insulating dielectric represented the environment for the InP hetero-junction bipolar transistors. Thin film micro strip lines and specially designed interconnections between the two metallization systems were characterized in dependence on frequencies up to 100 GHz.
a IHP, 15236 Frankfurt (Oder), Germany
b TU Berlin, 10587 Berlin, Germany
c Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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