Infrared emission from the substrate of GaAs-based semiconductor lasers
M. Ziegler1, R. Pomraenke2, M. Felger2, J.W. Tomm1, P. Vasa2, C. Lienau2, M.B. Sanayeh3, A. Gomez-Iglesias3, M. Reufer3, F. Bugge and G. Erbert4
Published in:
Appl. Phys. Lett., vol. 93, no. 04, p. 041101 (2008).
Abstract:
We report on the origin of three additional low-energy spontaneously emitted bands in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy and Fourier-transform infrared spectroscopy assign the different contributions to bandtail-related luminescence from the gain region as well as interband and deep-level-related luminescences from the GaAs substrate. The latter processes are photoexcited due to spontaneous emission from the active region followed by a cascaded photon-recycling process within the substrate.
1 Max-Born-Institut, Max-Born-Str. 2A, 12489 Berlin, Germany
2 Institut für Physik, Carl von Ossietzky Universität, 26111 Oldenburg, Germany
3 OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany
4 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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