A. Knauer, H. Wenzel, G. Erbert, B. Sumpf, M. Weyers

Published in:

J. Electron. Mater., vol. 30, no. 11, pp. 1421-1424 (2001).

Abstract:

AlGaAs-based lasers with GaAsP active regions for emission wavelengths near 730nm and 800nm were studied. Trimethyl aluminium sources with different levels of oxygen concentration were used for the deposition of the laser structures. The laser data show, that the oxygen level in the AlGaAs waveguides is very critical for the performance of the 730nm devices even for the use of an Al-free active region, while its influence is weak for the 800nm devices. Using the TMAl source leading to the lowest O-uptake in the AlGaAs waveguides from such structures 7W output power and a degradation rate of 1×10^-5h^-1 at 2W cw (100µm stripe width × 4mm, 25°C, 2000h) are achieved for 730nm emission.

Keywords:
GaAsP, AlGaAs, oxygen, metalorganic vapor phase epitaxy (MOVPE), quantum wells (QW), laser diodes

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