A. Boni, H.J. Wünsche, H. Wenzel and P. Crump

Published in:

Semicond. Sci. Technol., vol. 35, no. 08, pp. 085032, doi:10.1088/1361-6641/ab9723 (2020).

Abstract:

Electrons and holes injected into a semiconductor heterostructure containing quantum wells are captured with a finite time. We show theoretically that this very fact can cause a considerable excess contribution to the series resistivity and this is one of the main limiting factors to higher efficiency for GaAs based high-power lasers. The theory combines a standard microscopic-based model for the capture-escape processes in the quantum well with a drift-diffusion description of current flow outside the quantum well. Simulations of five GaAs-based devices differing in their Al-content reveal the root-cause of the unexpected and until now unexplained increase of the series resistance with decreasing heat sink temperature measured recently. The finite capture time results in resistances in excess of the bulk layer resistances (decreasing with increasing temperature) from 1 mΩ up to 30 mΩ in good agreement with the experiment.

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