Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application
D. Kang1, J.-T. Oh1, J.-O Song2, T.-Y. Seong2, M. Kneissl3, and H. Amano4
Published in:
Appl. Phys. Express, vol. 12, no. 10, pp. 102016 (2019).
Abstract:
The current injection mechanisms for blue light emitting diodes (LEDs) with and without V pits were examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by reducing the indium content. To identify the distribution of holes in the QWs, the electroluminescence of the LEDs was characterized by varying the positions of the QWs with the wider bandgap consecutively from n-cladding to p-cladding sides. For the LEDs without V pits, holes were injected through the top QWs (p-cladding side), while for the LEDs with V pits, holes were injected mainly through the bottom QWs (n-cladding side).
1 LED Division, LG Innotek Co., Ltd., Paju, Gyeonggi 10842, Republic of Korea
2 Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
3 Technical University of Berlin, Institute of Solid State Physics, Berlin, Germany and
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
4 Center of Integrated Research of Future Electronics, and Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan
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